製造零件編號

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

RS庫存編號:: 215-231
製造零件編號:: SCT040H120G3AG
製造商:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 1000 件）*

TWD533,700.00

(不含稅)

TWD560,380.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年9月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 +	TWD533.70	TWD533,700.00

* 參考價格

RS庫存編號:: 215-231
製造零件編號:: SCT040H120G3AG
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT
	Package Type	H2PAK-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.6V
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Height	4.8mm
	Length	15.25mm
	Width	10.4 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT
	Package Type H2PAK-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.6V
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Height 4.8mm
	Length 15.25mm
	Width 10.4 mm
	Automotive Standard AEC-Q101

Datasheet - SCT040H120G3AG

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG

訂單超過 $1,300.00 免費送貨

相關連結