STMicroelectronics HB Type P-Channel MOSFET, 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計 10 件 (按連續帶提供)*

TWD7,820.00

(不含稅)

TWD8,211.00

(含稅)

Add to Basket
選擇或輸入數量
最後的 RS 庫存
  • 最終 200 個,準備發貨

單位
每單位
10 - 99TWD782.00
100 +TWD759.00

* 參考價格

包裝方式:
RS庫存編號:
152-183P
製造零件編號:
STGSH80HB65DAG
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type P

Maximum Drain Source Voltage Vds

650V

Package Type

ACEPACK SMIT

Series

HB

Mount Type

Surface

Pin Count

9

Channel Mode

Depletion

Forward Voltage Vf

1.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

456nC

Maximum Operating Temperature

175°C

Standards/Approvals

Automotive-grade

Width

33.2mm

Length

25.2mm

Height

4.05mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very Compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified

High-speed switching series

Minimized tail current

Tight parameter distribution

Low thermal resistance thanks to DBC substrate

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。