STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1
- RS庫存編號:
- 151-949
- 製造零件編號:
- STD3NK60Z-1
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 75 件）*
TWD1,207.50
(不含稅)
TWD1,267.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,700 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 675 | TWD16.10 | TWD1,207.50 |
| 750 - 1425 | TWD15.30 | TWD1,147.50 |
| 1500 + | TWD14.20 | TWD1,065.00 |
* 參考價格
- RS庫存編號:
- 151-949
- 製造零件編號:
- STD3NK60Z-1
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
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