STMicroelectronics SuperMESH Type N-Channel MOSFET, 14 A, 500 V Enhancement, 3-Pin TO-247 STW15NK50Z
- RS庫存編號:
- 151-456
- 製造零件編號:
- STW15NK50Z
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,331.00
(不含稅)
TWD2,447.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 720 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD77.70 | TWD2,331.00 |
| 120 - 270 | TWD73.80 | TWD2,214.00 |
| 300 + | TWD68.40 | TWD2,052.00 |
* 參考價格
- RS庫存編號:
- 151-456
- 製造零件編號:
- STW15NK50Z
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.34Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 50°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.15mm | |
| Length | 34.95mm | |
| Standards/Approvals | RoHS | |
| Width | 15.75 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.34Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 50°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.15mm | ||
Length 34.95mm | ||
Standards/Approvals RoHS | ||
Width 15.75 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
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