STMicroelectronics SuperMESH Type N-Channel MOSFET, 9 A, 400 V Enhancement, 3-Pin TO-263 STB11NK40ZT4
- RS庫存編號:
- 151-427
- 製造零件編號:
- STB11NK40ZT4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 1000 件）*
TWD29,100.00
(不含稅)
TWD30,560.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | TWD29.10 | TWD29,100.00 |
* 參考價格
- RS庫存編號:
- 151-427
- 製造零件編號:
- STB11NK40ZT4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
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