onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92
- RS庫存編號:
- 806-1750
- 製造零件編號:
- J109
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD240.00
(不含稅)
TWD252.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 650 件準備從其他地點送貨
- 加上 3,875 件從 2026年1月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 225 | TWD9.60 | TWD240.00 |
| 250 - 475 | TWD9.40 | TWD235.00 |
| 500 + | TWD9.30 | TWD232.50 |
* 參考價格
- RS庫存編號:
- 806-1750
- 製造零件編號:
- J109
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | min. 40mA | |
| Maximum Gate Source Voltage | -25 V | |
| Maximum Drain Gate Voltage | 25V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Maximum Drain Source Resistance | 12 Ω | |
| Mounting Type | Through Hole | |
| Package Type | TO-92 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 85pF | |
| Source Gate On-Capacitance | 85pF | |
| Dimensions | 4.58 x 3.86 x 4.58mm | |
| Height | 4.58mm | |
| Width | 3.86mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 4.58mm | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current min. 40mA | ||
Maximum Gate Source Voltage -25 V | ||
Maximum Drain Gate Voltage 25V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Maximum Drain Source Resistance 12 Ω | ||
Mounting Type Through Hole | ||
Package Type TO-92 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 85pF | ||
Source Gate On-Capacitance 85pF | ||
Dimensions 4.58 x 3.86 x 4.58mm | ||
Height 4.58mm | ||
Width 3.86mm | ||
Maximum Operating Temperature +150 °C | ||
Length 4.58mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel JFET, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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