onsemi MMBFJ112 N-Channel JFET, Idss min. 5mA, 3-Pin SOT-23
- RS庫存編號:
- 761-3684
- 製造零件編號:
- MMBFJ112
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD172.50
(不含稅)
TWD181.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 75 件從 2026年1月12日 起裝運發貨
- 加上 3,000 件從 2026年3月11日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD6.90 | TWD172.50 |
| 750 - 1475 | TWD6.80 | TWD170.00 |
| 1500 + | TWD6.80 | TWD170.00 |
* 參考價格
- RS庫存編號:
- 761-3684
- 製造零件編號:
- MMBFJ112
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | min. 5mA | |
| Maximum Gate Source Voltage | -35 V | |
| Maximum Drain Gate Voltage | 35V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Maximum Drain Source Resistance | 50 Ω | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 28pF | |
| Source Gate On-Capacitance | 28pF | |
| Dimensions | 2.92 x 1.3 x 0.93mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Width | 1.3mm | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current min. 5mA | ||
Maximum Gate Source Voltage -35 V | ||
Maximum Drain Gate Voltage 35V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Maximum Drain Source Resistance 50 Ω | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 28pF | ||
Source Gate On-Capacitance 28pF | ||
Dimensions 2.92 x 1.3 x 0.93mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Width 1.3mm | ||
Length 2.92mm | ||
Height 0.93mm | ||
N-channel JFET, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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