onsemi J112 N-Channel JFET, Idss min. 5mA, 3-Pin TO-92
- RS庫存編號:
- 124-1385
- 製造零件編號:
- J112
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 袋，共 1000 件）*
TWD3,600.00
(不含稅)
TWD3,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8,000 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 - 1000 | TWD3.60 | TWD3,600.00 |
| 2000 + | TWD3.50 | TWD3,500.00 |
* 參考價格
- RS庫存編號:
- 124-1385
- 製造零件編號:
- J112
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | min. 5mA | |
| Maximum Gate Source Voltage | -35 V | |
| Maximum Drain Gate Voltage | 35V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Maximum Drain Source Resistance | 50 Ω | |
| Mounting Type | Through Hole | |
| Package Type | TO-92 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 28pF | |
| Source Gate On-Capacitance | 28pF | |
| Dimensions | 5.2 x 4.19 x 5.33mm | |
| Height | 5.33mm | |
| Width | 4.19mm | |
| Length | 5.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current min. 5mA | ||
Maximum Gate Source Voltage -35 V | ||
Maximum Drain Gate Voltage 35V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Maximum Drain Source Resistance 50 Ω | ||
Mounting Type Through Hole | ||
Package Type TO-92 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 28pF | ||
Source Gate On-Capacitance 28pF | ||
Dimensions 5.2 x 4.19 x 5.33mm | ||
Height 5.33mm | ||
Width 4.19mm | ||
Length 5.2mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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