Infineon FF300R12KE4HOSA1, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin 62 mm Module, Clamp

RS庫存編號:: 906-3079
製造零件編號:: FF300R12KE4HOSA1
製造商:: Infineon

Infineon FF300R12KE4HOSA1, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin 62 mm Module, Clamp

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RS庫存編號:: 906-3079
製造零件編號:: FF300R12KE4HOSA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	300A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	1600W
	Package Type	62 mm Module
	Mount Type	Clamp
	Channel Type	Type N
	Pin Count	7
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Series	62mmC
	Height	30.9mm
	Width	61.4 mm
	Length	106.4mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 300A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 1600W
	Package Type 62 mm Module
	Mount Type Clamp
	Channel Type Type N
	Pin Count 7
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Series 62mmC
	Height 30.9mm
	Width 61.4 mm
	Length 106.4mm
	Automotive Standard No

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoPACK^TM3/EconoPACK^TM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon FF300R12KE4HOSA1, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin 62 mm Module, Clamp

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IGBT Modules, Infineon

IGBT Discretes & Modules, Infineon

相關連結

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