- RS庫存編號:
- 752-8170
- 製造零件編號:
- BSM200GA120DN2HOSA1
- 製造商:
- Infineon
12 現貨庫存,可於6工作日發貨。
已增加
單價(不含稅) 個
TWD6,618.00
(不含稅)
TWD6,948.90
(含稅)
單位 | Per unit |
1 - 2 | TWD6,618.00 |
3 + | TWD6,452.00 |
- RS庫存編號:
- 752-8170
- 製造零件編號:
- BSM200GA120DN2HOSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 300 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1.55 kW |
Package Type | 62MM Module |
Configuration | Single |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 5 |
Transistor Configuration | Single |
Dimensions | 106.4 x 61.4 x 36.5mm |
Maximum Operating Temperature | +150 °C |