STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface
- RS庫存編號:
- 287-7044
- 製造零件編號:
- STGD4H60DF
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2500 件）*
TWD41,000.00
(不含稅)
TWD43,050.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月28日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 + | TWD16.40 | TWD41,000.00 |
* 參考價格
- RS庫存編號:
- 287-7044
- 製造零件編號:
- STGD4H60DF
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 4A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 75W | |
| Configuration | Single Collector | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 1.7mm | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Width | 6.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 4A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 75W | ||
Configuration Single Collector | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 1.7mm | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
Width 6.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Low thermal resistance
Short circuit rated
Soft and fast recovery antiparallel diode
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