製造零件編號

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

RS庫存編號:: 253-3499
製造零件編號:: BIDD05N60T
製造商:: Bourns

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

小計（1 卷，共 2500 件）*

TWD58,750.00

(不含稅)

TWD61,700.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月15日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 +	TWD23.50	TWD58,750.00

* 參考價格

RS庫存編號:: 253-3499
製造零件編號:: BIDD05N60T
製造商:: Bourns

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Bourns
	Maximum Continuous Collector Current	5 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±30V
	Maximum Power Dissipation	82 W
	Number of Transistors	1
	Configuration	Single Diode
	Package Type	TO-252

	選取全部
	品牌 Bourns
	Maximum Continuous Collector Current 5 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±30V
	Maximum Power Dissipation 82 W
	Number of Transistors 1
	Configuration Single Diode
	Package Type TO-252

Datasheet - BIDD05N60T

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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