製造零件編號

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

RS庫存編號:: 253-3500
製造零件編號:: BIDD05N60T
製造商:: Bourns

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

可享批量折扣

小計（1 包，共 5 件）*

TWD210.00

(不含稅)

TWD220.50

訂單超過 $1,300.00 免費送貨

有庫存

2,430 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 - 45	TWD42.00	TWD210.00
50 - 95	TWD40.00	TWD200.00
100 - 245	TWD37.40	TWD187.00
250 - 995	TWD35.00	TWD175.00
1000 +	TWD32.20	TWD161.00

* 參考價格

RS庫存編號:: 253-3500
製造零件編號:: BIDD05N60T
製造商:: Bourns

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Bourns
	Maximum Continuous Collector Current	5 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±30V
	Maximum Power Dissipation	82 W
	Number of Transistors	1
	Package Type	TO-252
	Configuration	Single Diode

	選取全部
	品牌 Bourns
	Maximum Continuous Collector Current 5 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±30V
	Maximum Power Dissipation 82 W
	Number of Transistors 1
	Package Type TO-252
	Configuration Single Diode

Datasheet - BIDD05N60T

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant

Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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