可享批量折扣
小計（1 包，共 5 件）*
TWD210.00
(不含稅)
TWD220.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,430 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD42.00 | TWD210.00 |
| 50 - 95 | TWD40.00 | TWD200.00 |
| 100 - 245 | TWD37.40 | TWD187.00 |
| 250 - 995 | TWD35.00 | TWD175.00 |
| 1000 + | TWD32.20 | TWD161.00 |
* 參考價格
- RS庫存編號:
- 253-3500
- 製造零件編號:
- BIDD05N60T
- 製造商:
- Bourns
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Bourns | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 82W | |
| Package Type | TO-252 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Series | BIDD05N60T | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Bourns | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 82W | ||
Package Type TO-252 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Series BIDD05N60T | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant