Infineon FS75R12KT3GBOSA1 IGBT Module, 100 A 1200 V Module, Panel
- RS庫存編號:
- 273-7408
- 製造零件編號:
- FS75R12KT3GBOSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 273-7408
- 製造零件編號:
- FS75R12KT3GBOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 355W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 20.5mm | |
| Standards/Approvals | EN61140, IEC61140 | |
| Length | 122mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 355W | ||
Package Type Module | ||
Mount Type Panel | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Height 20.5mm | ||
Standards/Approvals EN61140, IEC61140 | ||
Length 122mm | ||
Automotive Standard No | ||
The Infineon IGBT module has 1200V collector emitter voltage and 75A continuous DC collector current. It has low stray inductance module design. This IGBT module available with fast TRENCHSTOP IGBT3, emitter controlled high efficiency diode and NTC.
Thermal resistance
High power density
Compact module concept