Infineon IKW50N120CH7XKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 273-2979
- 製造零件編號:
- IKW50N120CH7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD4,089.00
(不含稅)
TWD4,293.60
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD136.30 | TWD4,089.00 |
| 60 + | TWD133.60 | TWD4,008.00 |
* 參考價格
- RS庫存編號:
- 273-2979
- 製造零件編號:
- IKW50N120CH7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 398W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Length | 21.1mm | |
| Series | TRENCHSTOPTM IGBT7 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 398W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Length 21.1mm | ||
Series TRENCHSTOPTM IGBT7 | ||
Automotive Standard No | ||
The Infineon IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonisation such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Humidity robustness under harsh environment
Improved EMI performance
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