Infineon, Type N-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 273-2974
- 製造零件編號:
- IKQ100N120CH7XKSA1
- 製造商:
- Infineon
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TWD354.00
(不含稅)
TWD371.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8 件從 2026年6月08日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD354.00 |
| 5 - 9 | TWD347.00 |
| 10 - 24 | TWD322.00 |
| 25 - 49 | TWD294.00 |
| 50 + | TWD271.00 |
* 參考價格
- RS庫存編號:
- 273-2974
- 製造零件編號:
- IKQ100N120CH7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 361W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 66ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOP IGBT7 | |
| Length | 20.9mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 361W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 66ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOP IGBT7 | ||
Length 20.9mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonisation such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Lowest conduction losses
Humidity robustness under harsh environment
Improved EMI performance
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