Infineon IMBG120R350M1HXTMA1 IGBT Module, 4.7 A TO-263
- RS庫存編號:
- 258-3757
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
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小計（1 件）*
TWD164.00
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TWD172.20
(含稅)
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|---|---|
| 1 - 9 | TWD164.00 |
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* 參考價格
- RS庫存編號:
- 258-3757
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 4.7A | |
| Product Type | IGBT Module | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 4.7A | ||
Product Type IGBT Module | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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