Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS庫存編號:
- 258-3757
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD164.00
(不含稅)
TWD172.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 654 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD164.00 |
| 10 - 99 | TWD147.00 |
| 100 - 249 | TWD139.00 |
| 250 - 499 | TWD122.00 |
| 500 + | TWD114.00 |
* 參考價格
- RS庫存編號:
- 258-3757
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Package Type | PG-TO263-7 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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