Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS庫存編號:
- 258-3756
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 卷，共 1000 件）*
TWD77,900.00
(不含稅)
TWD81,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月03日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD77.90 | TWD77,900.00 |
| 2000 + | TWD76.40 | TWD76,400.00 |
* 參考價格
- RS庫存編號:
- 258-3756
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Package Type | PG-TO263-7 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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