Infineon IGBT Module, 4.7 A TO-263
- RS庫存編號:
- 258-3756
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD77,900.00
(不含稅)
TWD81,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD77.90 | TWD77,900.00 |
| 2000 + | TWD76.40 | TWD76,400.00 |
* 參考價格
- RS庫存編號:
- 258-3756
- 製造零件編號:
- IMBG120R350M1HXTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 4.7A | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 4.7A | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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