Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO-247
- RS庫存編號:
- 248-6657
- 製造零件編號:
- AIKQ200N75CP2XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 248-6657
- 製造零件編號:
- AIKQ200N75CP2XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 200A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 15.9mm | |
| Height | 5.1mm | |
| Length | 41.2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 200A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Package Type TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 15.9mm | ||
Height 5.1mm | ||
Length 41.2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Self limiting current under short circuit condition
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability