Infineon IGBT, 200 A 750 V TO-247
- RS庫存編號:
- 248-6656
- 製造零件編號:
- AIKQ200N75CP2XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 240 件）*
TWD69,168.00
(不含稅)
TWD72,626.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 240 - 240 | TWD288.20 | TWD69,168.00 |
| 480 + | TWD282.40 | TWD67,776.00 |
* 參考價格
- RS庫存編號:
- 248-6656
- 製造零件編號:
- AIKQ200N75CP2XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Package Type | TO-247 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 15.9 mm | |
| Length | 41.2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Package Type TO-247 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals AEC-Q101 | ||
Width 15.9 mm | ||
Length 41.2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Self limiting current under short circuit condition
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability