Name: Infineon FS950R08A6P2BBPSA1 IGBT Module, 950 A 750 V HybridPACK
Brand: Infineon
SKU: 244-5879
Price: 14234.85 TWD
Availability: InStock

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	950 A
	Maximum Collector Emitter Voltage	750 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	6
	Maximum Power Dissipation	870 W
	Package Type	HybridPACK

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 950 A
	Maximum Collector Emitter Voltage 750 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 6
	Maximum Power Dissipation 870 W
	Package Type HybridPACK

Datasheet - FS950R08A6P2BBPSA1

The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.

Electrical Features

Blocking voltage 750 V

Low VCEsat

Low switching losses

Low Qg and crss

Low inductive design Tvj op = 150° C

Short-time extended operation temperature Tvj op = 175°C

Mechanical features

4.2kV DC 1sec insulation

High creepage and clearance distances

Compact design

High power density

Direct cooled pinFin base plate

Guiding elements for PCB and cooler assembly

Integrated NTC temperature sensor

Pressfit contact technology

RoHS compliant

UL 94 V0 module frame

單位	每單位
1 - 1	TWD13,557.00
2 +	TWD13,286.00

Infineon FS950R08A6P2BBPSA1 IGBT Module, 950 A 750 V HybridPACK

訂單超過 $1,300.00 免費送貨

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