Infineon IKW25N120CS7XKSA1, N-Channel IGBT, 25 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 232-6728
- 製造零件編號:
- IKW25N120CS7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD232.00
(不含稅)
TWD243.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 233 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD232.00 |
| 10 - 19 | TWD228.00 |
| 20 - 29 | TWD221.00 |
| 30 + | TWD217.00 |
* 參考價格
- RS庫存編號:
- 232-6728
- 製造零件編號:
- IKW25N120CS7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 25A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | TRENCHSTOPTM IGBT 7 technology | |
| Height | 5.3mm | |
| Width | 16.3mm | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 25A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series TRENCHSTOPTM IGBT 7 technology | ||
Height 5.3mm | ||
Width 16.3mm | ||
Length 21.5mm | ||
Automotive Standard No | ||
Infineon TRENCHSTOPTM IGBT 7 technology Series IGBT, 1200V Collector-Emitter Voltage, 25A Collector Current - IKW25N120CS7XKSA1
This IGBT is a through-hole power transistor designed for high-voltage switching in industrial applications. It operates as an N-channel device in a TO-247 package and suits circuits requiring robust collector-emitter blocking and gate control. The component is specified for use across a wide ambient range and complies with recognised device mounting standards.
Features and Benefits:
• 1200 V collector-emitter rating for high-voltage switching capability
• 25 A continuous collector current enabling sustained load handling
• ±20 V gate-emitter tolerance for flexible gate-drive margins
• 2 V maximum Vce(sat) for reduced conduction losses at rated current
• Rated to 175 °C for operation in elevated-temperature environments
• 25 A continuous collector current enabling sustained load handling
• ±20 V gate-emitter tolerance for flexible gate-drive margins
• 2 V maximum Vce(sat) for reduced conduction losses at rated current
• Rated to 175 °C for operation in elevated-temperature environments
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring sustained current handling
• Can be used for inductive-load switching in power systems
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring sustained current handling
• Can be used for inductive-load switching in power systems
What package type does it use for mounting and thermal handling?
It is supplied in a TO-247 package intended for through-hole mounting to facilitate heat-sinking and board installation.
What operating temperature range can it handle during service?
It is specified to function between -55 °C and 175 °C across the rated limits.
How many transistor elements are contained within the device?
The device comprises a single transistor element in the encapsulation.
Which reliability or standards approvals are referenced for device testing?
It carries approvals aligned with JEDEC 47/20/22 testing standards.