Infineon, Type N-Channel IGBT, 140 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 273-2976
- 製造零件編號:
- IKQ140N120CH7XKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD375.00
(不含稅)
TWD393.75
(含稅)
添加 4 件 件可免費送貨
有庫存
- 212 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 4 | TWD375.00 |
| 5 - 9 | TWD367.00 |
| 10 - 24 | TWD341.00 |
| 25 - 49 | TWD313.00 |
| 50 + | TWD289.00 |
* 參考價格
- RS庫存編號:
- 273-2976
- 製造零件編號:
- IKQ140N120CH7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 140A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 962W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.9mm | |
| Width | 15.9 mm | |
| Series | TRENCHSTOP IGBT7 | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 140A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 962W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 20.9mm | ||
Width 15.9 mm | ||
Series TRENCHSTOP IGBT7 | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonisation such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Lowest conduction losses
Humidity robustness under harsh environment
Improved EMI performance
