Infineon FP75R12N2T7B11BPSA1, Type N-Channel IGBT, 75 A 1200 V, 31-Pin Module, Chassis
- RS庫存編號:
- 232-6717
- 製造零件編號:
- FP75R12N2T7B11BPSA1
- 製造商:
- Infineon
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TWD4,313.00
(不含稅)
TWD4,528.65
(含稅)
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* 參考價格
- RS庫存編號:
- 232-6717
- 製造零件編號:
- FP75R12N2T7B11BPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Mount Type | Chassis | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 21.3mm | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Series | FP75R12N2T7_B11 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Mount Type Chassis | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 21.3mm | ||
Length 107.5mm | ||
Width 45 mm | ||
Series FP75R12N2T7_B11 | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density