Infineon IGBT Module, 750 A 1200 V, 11-Pin AG-ECONOD, Surface
- RS庫存編號:
- 232-3046
- 製造零件編號:
- FF750R12ME7B11BPSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 托盤，共 10 件）*
TWD62,158.00
(不含稅)
TWD65,265.90
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 40 | TWD6,215.80 | TWD62,158.00 |
| 50 + | TWD6,029.30 | TWD60,293.00 |
* 參考價格
- RS庫存編號:
- 232-3046
- 製造零件編號:
- FF750R12ME7B11BPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 750A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Package Type | AG-ECONOD | |
| Mount Type | Surface | |
| Pin Count | 11 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.5mm | |
| Standards/Approvals | 60068, 60749, IEC 60747 | |
| Length | 152mm | |
| Series | FF750R12ME7_B11 | |
| Width | 62.5 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 750A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Package Type AG-ECONOD | ||
Mount Type Surface | ||
Pin Count 11 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.5mm | ||
Standards/Approvals 60068, 60749, IEC 60747 | ||
Length 152mm | ||
Series FF750R12ME7_B11 | ||
Width 62.5 mm | ||
Automotive Standard No | ||
The Infineon has EconoDUAL 1200 V, 750 A dual TRENCHSTOP IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. This module has Higher inverter output current for the same frame size and is suitable for press-in and soldering process.
Standard housing
Isolated base plate
High power density
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