Infineon, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 218-4391
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,724.00
(不含稅)
TWD2,860.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 90 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD90.80 | TWD2,724.00 |
| 60 - 90 | TWD88.80 | TWD2,664.00 |
| 120 + | TWD86.80 | TWD2,604.00 |
* 參考價格
- RS庫存編號:
- 218-4391
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 198W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Series | IGW75N65H5 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 198W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Length 21.1mm | ||
Height 5.21mm | ||
Standards/Approvals JEDEC, RoHS | ||
Series IGW75N65H5 | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
相關連結
- Infineon IGW75N65H5XKSA1 75 A 650 V Through Hole
- Infineon 75 A 650 V Through Hole
- Infineon 75 A 650 V Through Hole
- Infineon IKZ75N65EH5XKSA1 75 A 650 V Through Hole
- Infineon IKW75N65EL5XKSA1 75 A 650 V Through Hole
- Infineon 70 A 650 V Screw
- Infineon IKWH70N65WR6XKSA1 70 A 650 V Screw
- onsemi 75 A 650 V Through Hole