Infineon IGW75N65H5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 218-4392
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
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TWD706.00
(不含稅)
TWD741.30
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD141.20 | TWD706.00 |
| 10 - 10 | TWD137.60 | TWD688.00 |
| 15 + | TWD135.60 | TWD678.00 |
* 參考價格
- RS庫存編號:
- 218-4392
- 製造零件編號:
- IGW75N65H5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 198W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Series | IGW75N65H5 | |
| Standards/Approvals | JEDEC, RoHS | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 198W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Series IGW75N65H5 | ||
Standards/Approvals JEDEC, RoHS | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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