Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6673
- Distrelec 貨號:
- 304-31-965
- 製造零件編號:
- IKW30N65H5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD617.00
(不含稅)
TWD647.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD123.40 | TWD617.00 |
| 10 - 95 | TWD120.20 | TWD601.00 |
| 100 - 245 | TWD117.20 | TWD586.00 |
| 250 - 495 | TWD114.40 | TWD572.00 |
| 500 + | TWD111.60 | TWD558.00 |
* 參考價格
- RS庫存編號:
- 215-6673
- Distrelec 貨號:
- 304-31-965
- 製造零件編號:
- IKW30N65H5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Height | 5.21mm | |
| Length | 42mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Height 5.21mm | ||
Length 42mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference