Infineon IKW15N120BH6XKSA1, Type N-Channel IGBT Single Transistor IC, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6668
- 製造零件編號:
- IKW15N120BH6XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 215-6668
- 製造零件編號:
- IKW15N120BH6XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 200W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 16.13mm | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 200W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 42mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 16.13mm | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon sixth generation insulated-gate bipolar transistor of high speed soft switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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