Infineon, Type N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 226-6077
- 製造零件編號:
- IHW30N120R5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD1,977.00
(不含稅)
TWD2,076.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 90 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD65.90 | TWD1,977.00 |
| 150 + | TWD64.60 | TWD1,938.00 |
* 參考價格
- RS庫存編號:
- 226-6077
- 製造零件編號:
- IHW30N120R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Length | 42mm | |
| Series | Resonant Switching | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Length 42mm | ||
Series Resonant Switching | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
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