Name: STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
Brand: STMicroelectronics
SKU: 206-7209
Price: 68.98 TWD
Availability: OutOfStock

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	147 W
	Number of Transistors	1
	Package Type	TO-247
	Pin Count	3
	Transistor Configuration	Single

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 147 W
	Number of Transistors 1
	Package Type TO-247
	Pin Count 3
	Transistor Configuration Single

Datasheet - STGWA20H65DFB2

The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

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