製造零件編號

STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

RS庫存編號:: 204-9872
製造零件編號:: STGF20H65DFB2
製造商:: STMicroelectronics

STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

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小計（1 包，共 5 件）*

TWD276.00

(不含稅)

TWD289.80

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
5 - 10	TWD55.20	TWD276.00
15 - 20	TWD53.80	TWD269.00
25 +	TWD53.00	TWD265.00

* 參考價格

RS庫存編號:: 204-9872
製造零件編號:: STGF20H65DFB2
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	45 W
	Package Type	TO-220FP
	Pin Count	3

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	品牌 STMicroelectronics
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 45 W
	Package Type TO-220FP
	Pin Count 3

Datasheet - STGF20H65DFB2

COO (Country of Origin):: CN

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

訂單超過 $1,300.00 免費送貨

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