STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole
- RS庫存編號:
- 204-9872
- 製造零件編號:
- STGF20H65DFB2
- 製造商:
- STMicroelectronics
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TWD309.00
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TWD324.45
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 20 件從 2026年5月25日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD61.80 | TWD309.00 |
| 15 - 20 | TWD60.20 | TWD301.00 |
| 25 + | TWD59.40 | TWD297.00 |
* 參考價格
- RS庫存編號:
- 204-9872
- 製造零件編號:
- STGF20H65DFB2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 45W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 45W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series STG | ||
Length 10.4mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
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