STMicroelectronics STGF6NC60HD, N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- RS庫存編號:
- 795-8981
- 製造零件編號:
- STGF6NC60HD
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加15件可節省2%
查看批量定價選項小計（1 包，共 5 件）*
TWD252.00
(不含稅)
TWD264.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 30 件從 2026年11月09日 起發貨
- 加上 35 件從 2026年11月16日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 10 | TWD50.40 | TWD252.00 | - |
| 15 - 20 | TWD49.00 | TWD245.00 | 2% |
| 25 + | TWD48.20 | TWD241.00 | 4% |
* 參考價格
- RS庫存編號:
- 795-8981
- 製造零件編號:
- STGF6NC60HD
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 7A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 56W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Series | Powermesh | |
| Width | 4.6mm | |
| Standards/Approvals | JEDEC JESD97 | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 7A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 56W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Series Powermesh | ||
Width 4.6mm | ||
Standards/Approvals JEDEC JESD97 | ||
Height 16.4mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相關連結
- STMicroelectronics STGF6NC60HD 7 A 600 V Through Hole
- STMicroelectronics STGF7NB60SL 7 A 600 V Through Hole
- STMicroelectronics STGF10NB60SD 29 A 600 V Through Hole
- STMicroelectronics STGF20H65DFB2 40 A 650 V Through Hole
- STMicroelectronics STGE200NB60S 200 A 600 V Clamp
- Starpower GD600HFX65C2S 600 A, 7-Pin Module
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP STP6NK60ZFP