Vishay, Type N-Channel IGBT, 3-Pin TO-263, Surface

此圖片僅供參考,請參閲產品詳細資訊及規格

暫時無法供應
我們無法確定此產品何時有貨,RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
180-7419
製造零件編號:
SUM70060E-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

375W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.875mm

Series

ThunderFET

Standards/Approvals

RoHS

Width

10.414 mm

Energy Rating

125mJ

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• AC/DC switch-mode power supplies

• Battery management

• DC/AC inverters

• DC/DC converters

• Lighting

• Motor drive switches

• Synchronous rectifier

• Uninterruptible power supplies

相關連結