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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Littelfuse
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	20A
	Maximum Collector Emitter Voltage Vceo	365V
	Maximum Power Dissipation Pd	165W
	Package Type	TO-263
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	6μs
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Maximum Gate Emitter Voltage VGEO	15 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.29mm
	Height	4.83mm
	Width	15.88 mm
	Series	Ignition IGBT
	Standards/Approvals	RoHS
	Energy Rating	500mJ
	Automotive Standard	No

	選取全部
	品牌 Littelfuse
	Product Type IGBT
	Maximum Continuous Collector Current Ic 20A
	Maximum Collector Emitter Voltage Vceo 365V
	Maximum Power Dissipation Pd 165W
	Package Type TO-263
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 6μs
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Maximum Gate Emitter Voltage VGEO 15 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.29mm
	Height 4.83mm
	Width 15.88 mm
	Series Ignition IGBT
	Standards/Approvals RoHS
	Energy Rating 500mJ
	Automotive Standard No

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Littelfuse, Type N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface

IGBT Discretes, ON Semiconductor

IGBT Discretes, ON Semiconductor

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