Littelfuse NGB8207ABNT4G, Type N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface

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包裝方式：
RS庫存編號:
805-1753
製造零件編號:
NGB8207ABNT4G
製造商:
Littelfuse
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品牌

Littelfuse

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

365V

Maximum Power Dissipation Pd

165W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

6μs

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

15 V

Maximum Operating Temperature

175°C

Length

10.29mm

Standards/Approvals

RoHS

Series

Ignition IGBT

Height

4.83mm

Width

15.88 mm

Energy Rating

500mJ

Automotive Standard

No

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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