Infineon, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 165-5481
製造零件編號:: IKW20N60H3FKSA1
製造商:: Infineon

Infineon, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

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TWD1,497.00

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TWD1,572.00

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單位	每單位	每管*
30 - 120	TWD49.90	TWD1,497.00
150 +	TWD42.70	TWD1,281.00

* 參考價格

RS庫存編號:: 165-5481
製造零件編號:: IKW20N60H3FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current Ic	40A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	170W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	100kHz
	Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Series	TrenchStop
	Energy Rating	1.07mJ
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current Ic 40A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 170W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 100kHz
	Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Series TrenchStop
	Energy Rating 1.07mJ
	Automotive Standard No

COO (Country of Origin):: CN

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1

This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits

• Utilises TRENCHSTOP technology, delivering low VCEsat

• Achieves maximum junction temperature of 175°C for robust performance

• Features a soft, fast recovery anti-parallel diode enhancing reliability

• Ensures a switching speed of 100kHz for efficient operation

Applications

• Utilised in uninterruptible power supplies for reliable operation

• Effective in welding converters for high-performance welding

• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?

The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?

It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?

The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.