Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

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RS庫存編號:
165-5481
製造零件編號:
IKW20N60H3FKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

170 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Energy Rating

1.07mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

1100pF

COO (Country of Origin):
CN

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1


This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits


• Utilises TRENCHSTOP technology, delivering low VCEsat
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation

Applications


• Utilised in uninterruptible power supplies for reliable operation
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?


The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?


It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?


The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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