IXYS, Type N-Channel IGBT, 48 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 146-1729
- 製造零件編號:
- IXGH48N60B3
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 60 件）*
TWD20,796.00
(不含稅)
TWD21,835.80
(含稅)
添加 60 件 件可免費送貨
暫時缺貨
- 從 2026年9月23日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 60 - 240 | TWD346.60 | TWD20,796.00 |
| 300 + | TWD312.00 | TWD18,720.00 |
* 參考價格
- RS庫存編號:
- 146-1729
- 製造零件編號:
- IXGH48N60B3
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 48A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | GenX3TM 600V IGBT | |
| Length | 20.32mm | |
| Width | 16.26 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 48A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series GenX3TM 600V IGBT | ||
Length 20.32mm | ||
Width 16.26 mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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