IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
168-4775
製造零件編號:
IXA12IF1200HB
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

85 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

COO (Country of Origin):
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結