IXYS IXA12IF1200HB, Type N-Channel IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 808-0256
- Distrelec 貨號:
- 304-45-327
- 製造零件編號:
- IXA12IF1200HB
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD372.00
(不含稅)
TWD390.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 4 件準備從其他地點送貨
- 最終 8 件從 2026年3月24日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD186.00 | TWD372.00 |
| 8 - 14 | TWD182.00 | TWD364.00 |
| 16 + | TWD178.50 | TWD357.00 |
* 參考價格
- RS庫存編號:
- 808-0256
- Distrelec 貨號:
- 304-45-327
- 製造零件編號:
- IXA12IF1200HB
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 85W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Series | Planar | |
| Length | 20.3mm | |
| Width | 16.24 mm | |
| Height | 5.3mm | |
| Standards/Approvals | IEC 60747, RoHS, Epoxy meets UL 94V-0 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 85W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 125°C | ||
Series Planar | ||
Length 20.3mm | ||
Width 16.24 mm | ||
Height 5.3mm | ||
Standards/Approvals IEC 60747, RoHS, Epoxy meets UL 94V-0 | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.