IXYS IXA12IF1200HB, Type N-Channel IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 808-0256
- Distrelec 貨號:
- 304-45-327
- 製造零件編號:
- IXA12IF1200HB
- 製造商:
- IXYS
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查看批量定價選項小計（1 包，共 2 件）*
TWD417.00
(不含稅)
TWD437.84
(含稅)
訂單超過 $1,300.00 免費送貨
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- 8 件從 2026年6月15日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD208.50 | TWD417.00 |
| 8 - 14 | TWD204.00 | TWD408.00 |
| 16 + | TWD200.00 | TWD400.00 |
* 參考價格
- RS庫存編號:
- 808-0256
- Distrelec 貨號:
- 304-45-327
- 製造零件編號:
- IXA12IF1200HB
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 85W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Height | 5.3mm | |
| Length | 20.3mm | |
| Standards/Approvals | IEC 60747, RoHS, Epoxy meets UL 94V-0 | |
| Series | Planar | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 85W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 125°C | ||
Height 5.3mm | ||
Length 20.3mm | ||
Standards/Approvals IEC 60747, RoHS, Epoxy meets UL 94V-0 | ||
Series Planar | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.