IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs

小計（1 件）*

TWD674.00

(不含稅)

TWD707.70

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 53 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 +TWD674.00

* 參考價格

RS庫存編號:
125-8050
製造零件編號:
IXXK100N60C3H1
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

695 W

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

20 → 60kHz

Transistor Configuration

Single

Dimensions

20.3 x 5.3 x 26.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Energy Rating

600mJ

COO (Country of Origin):
PH

IGBT Discretes, IXYS


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結