Semikron Danfoss SKM300GB12E4, Type N-Channel IGBT Module, 422 A 1200 V, 7-Pin SEMITRANS, Screw
- RS庫存編號:
- 125-1113
- 製造零件編號:
- SKM300GB12E4
- 製造商:
- Semikron Danfoss
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- RS庫存編號:
- 125-1113
- 製造零件編號:
- SKM300GB12E4
- 製造商:
- Semikron Danfoss
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Semikron Danfoss | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 422A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Package Type | SEMITRANS | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Switching Speed | 12kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 30.5mm | |
| Length | 106.4mm | |
| Standards/Approvals | No | |
| Series | SKM300GB12E4 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Semikron Danfoss | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 422A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Package Type SEMITRANS | ||
Mount Type Screw | ||
Channel Type Type N | ||
Pin Count 7 | ||
Switching Speed 12kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 30.5mm | ||
Length 106.4mm | ||
Standards/Approvals No | ||
Series SKM300GB12E4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- SK
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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