Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole

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TWD8,585.00

(不含稅)

TWD9,014.25

(含稅)

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  • 2026年7月31日 發貨
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RS庫存編號:
122-0391
製造零件編號:
SEMiX303GB12E4p
製造商:
Semikron Danfoss
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品牌

Semikron Danfoss

Maximum Continuous Collector Current

469 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Configuration

Series

Package Type

SEMiX®3p

Mounting Type

Through Hole

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

150 x 62.4 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

SEMiX® Dual IGBT Modules


Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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