Infineon FS150R12KT4BOSA1, Type N-Channel IGBT Module, 150 A 1200 V, 35-Pin EconoPACK 3, Clamp

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  • 2028年7月10日 發貨
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包裝方式:
RS庫存編號:
110-7108
製造零件編號:
FS150R12KT4BOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

150A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

750W

Package Type

EconoPACK 3

Mount Type

Clamp

Channel Type

Type N

Pin Count

35

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

150°C

Length

122mm

Height

17mm

Standards/Approvals

No

Automotive Standard

No

不適用

Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 150A Max Continuous Collector Current - FS150R12KT4BOSA1


This IGBT module is a power semiconductor device designed to switch and control high-voltage, high-current circuits in industrial power-electronic systems. It operates across a wide temperature span suitable for demanding environments and is housed in a compact clamp-mount package that integrates with standard power assemblies.

Features and Benefits:


• 1200V rating enables high-voltage switching capability
• 150A continuous current supports substantial load handling
• 2.1V Vce(sat) provides reduced conduction losses
• 750W power dissipation allows sustained power throughput
• 35 pins deliver multiple electrical interconnections
• 20V gate-emitter tolerance supports robust gate drive ranges

Applications


• Suitable for traction and motor-drive inverter stages
• Ideal for industrial converters and power supplies
• Used with three-phase inverters in renewable systems
• Can be used for induction heating power modules
• Appropriate for medium-voltage industrial drives

What mounting considerations are required for installation?


It uses a clamp-mounting arrangement that ensures secure mechanical contact and straightforward integration into existing heat-sink assemblies.

How does the device perform in elevated ambient conditions?


Rated to operate up to 150 °C junction temperature, it maintains switching capability across high-temperature duty cycles.

What gate-voltage constraints must be observed during drive design?


The gate-emitter voltage must not exceed 20V to avoid gate-device stress while enabling proper turn-on and turn-off control.

How tolerant is the module to low-temperature deployment?


It functions down to -40 °C, permitting use in cold-start conditions without compromising basic switching performance.

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