Infineon IKQ120N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- RS庫存編號:
- 284-989
- 製造零件編號:
- IKQ120N65EH7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
抱歉，我們不知道何時會到貨。
- RS庫存編號:
- 284-989
- 製造零件編號:
- IKQ120N65EH7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 498W | |
| Package Type | PG-TO-247-3-PLUS-N | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Length | 20.1mm | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 498W | ||
Package Type PG-TO-247-3-PLUS-N | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Length 20.1mm | ||
Width 15.9 mm | ||
Automotive Standard No | ||
The Infineon IGBT with Advanced power semiconductor revolutionises efficiency in various applications with its high speed capabilities and low saturation voltage. Designed with the renowned 650 V TRENCHSTOP IGBT7 technology, it excels in hard switching topologies, making it Ideal for industrial UPS systems, EV charging solutions, and string inverters. This robust component is qualified under stringent industrial standards, ensuring reliability and longevity in demanding environments.
Utilizes trench technology for efficiency
Minimizes switching losses for performance
Engineered for reliability in high humidity
Smooth switching characteristics for precision
Designed for versatile power electronics use
Qualified for industrial applications per JEDEC
Supports device lifespan with thermal management
Provides simulation capabilities with PSpice models
相關連結
- Infineon IKQ120N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ150N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IGQ75N120S7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ75N120CH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ100N120CS7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ120N120CS7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ75N120CS7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IGQ120N120S7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,