Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface
- RS庫存編號:
- 225-0574
- 製造零件編號:
- IHW40N65R6XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD477.00
(不含稅)
TWD500.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 20 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD95.40 | TWD477.00 |
| 10 - 95 | TWD93.20 | TWD466.00 |
| 100 - 245 | TWD90.80 | TWD454.00 |
| 250 - 495 | TWD88.40 | TWD442.00 |
| 500 + | TWD82.00 | TWD410.00 |
* 參考價格
- RS庫存編號:
- 225-0574
- 製造零件編號:
- IHW40N65R6XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 83A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | PG-TO-247 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS | |
| Width | 21.5 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 83A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 210W | ||
Package Type PG-TO-247 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 16.3mm | ||
Height 5.3mm | ||
Series TrenchStop | ||
Standards/Approvals RoHS | ||
Width 21.5 mm | ||
Automotive Standard No | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
相關連結
- Infineon 83 A 650 V Surface
- Infineon IGBT 650 V, 3-Pin PG-TO-247
- Infineon IKW30N65WR5XKSA1 IGBT 650 V, 3-Pin PG-TO-247
- Infineon IKQ120N65EH7XKSA1 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- Infineon IGBT Module, 75 A 650 V PG-TO-247
- Infineon 83 A 650 V Through Hole
- Infineon IKW75N65SS5XKSA1 IGBT Module, 75 A 650 V PG-TO-247
- Infineon IHW50N65R6XKSA1 83 A 650 V Through Hole