Infineon IHW40N65R6XKSA1 IGBT 650 V, 3-Pin PG-TO247-3
- RS庫存編號:
- 225-0574
- 製造零件編號:
- IHW40N65R6XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD477.00
(不含稅)
TWD500.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 35 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD95.40 | TWD477.00 |
| 10 - 95 | TWD93.20 | TWD466.00 |
| 100 - 245 | TWD90.80 | TWD454.00 |
| 250 - 495 | TWD88.40 | TWD442.00 |
| 500 + | TWD82.00 | TWD410.00 |
* 參考價格
- RS庫存編號:
- 225-0574
- 製造零件編號:
- IHW40N65R6XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 210 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 210 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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