Infineon IKZA40N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole
- RS庫存編號:
- 284-617
- 製造零件編號:
- IKZA40N65EH7XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 284-617
- 製造零件編號:
- IKZA40N65EH7XKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | PG-TO-247-4-STD-NT3.7 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type PG-TO-247-4-STD-NT3.7 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
The Infineon IGBT is designed to deliver high performance with a low saturation voltage, utilising the latest TRENCHSTOP technology. By integrating high speed capabilities with rugged characteristics, this product stands out in various applications, from industrial uninterruptible power supplies to electric vehicle charging systems. The device operates efficiently at a collector emitter voltage of 650 V and can handle high current levels, making it Ideal for demanding conditions. Its capabilities are further enhanced with a very soft, fast recovery diode, ensuring smooth operation. Aimed at engineers and technicians, the product is built to last, boasting moisture resistance and compliance with rigorous industrial standards.
Optimised for hard switching applications
Excellent humidity robustness for reliability
Low saturation voltage enhances efficiency
Fast recovery diode for smooth switching
Qualified for industrial use standards
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