Infineon 2ED21091S06FXUMA1, Gate Driver 2, 290 mA 8-Pin 20 V, DSO-8

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TWD58.80

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包裝方式：
RS庫存編號:
258-0606
製造零件編號:
2ED21091S06FXUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Gate Driver

Output Current

290mA

Pin Count

8

Package Type

DSO-8

Fall Time

35ns

Driver Type

Gate Driver

Rise Time

100ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

2ED21091S6F

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost

Floating channel designed for bootstrap operation

Independent under voltage lockout for both channels

The dual function DT/SD input turns off both channels

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