Infineon 2ED2109S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

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包裝方式：
RS庫存編號:
226-6023
製造零件編號:
2ED2109S06FXUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Number of Outputs

2

Driver Type

MOSFET

Rise Time

150ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

25V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

JEDEC47/20/22

Height

1.72mm

Series

2ED2109 (4) S06F (J)

Length

4.9mm

Width

3.9 mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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