Infineon 2ED2106S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 20 V, DSO

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TWD227.00

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TWD238.40

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包裝方式:
RS庫存編號:
226-6020
製造零件編號:
2ED2106S06FXUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Package Type

DSO

Fall Time

80ns

Driver Type

MOSFET

Rise Time

100ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

4.9mm

Series

2ED2106S06F

Height

1.72mm

Standards/Approvals

No

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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